The 2SB1241TV2R is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 3A. It has a maximum power dissipation of 1W and can operate at temperatures up to 150°C. The transistor is packaged in a through-hole package and is lead-free. It has a gain bandwidth product of 100MHz and a transition frequency of 70MHz.
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| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Transition Frequency | 70MHz |
| DC Rated Voltage | -80V |
| RoHS | Compliant |
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