The 2SB1260T100P is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It features a gain bandwidth product of 100MHz and a maximum power dissipation of 2W. The transistor is packaged in a TO-243AA surface mount package and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
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Rohm 2SB1260T100P technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -80V |
| RoHS | Compliant |
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