PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a 100V Collector Base Voltage (VCBO). Offers a maximum continuous collector current of -2A and a maximum power dissipation of 10W. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-252-3 (SC-63) surface-mount case with 3 pins and a minimum hFE of 1000.
PackageTO-252-3
Voltage100V
Current2A
Current Rating-2A
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Technical Specifications
Rohm 2SB1316TL technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -2A |
| Current | 2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 8V |
| Gain Bandwidth Product | 50MHz |
| Height | 2.3mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 50MHz |
| Voltage | 100V |
| DC Rated Voltage | -100V |
| Width | 5.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SB1316TL Datasheet
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