PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a 100V Collector Base Voltage (VCBO). Offers a maximum continuous collector current of -2A and a maximum power dissipation of 10W. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-252-3 (SC-63) surface-mount case with 3 pins and a minimum hFE of 1000.
PackageTO-252-3
Voltage100V
Current2A
Current Rating-2A
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Technical Specifications
Rohm 2SB1316TL technical specifications.
General
Package/Case
TO-252-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.5V
Contact Plating
Copper, Tin
Continuous Collector Current
-2A
Current
2A
Current Rating
-2A
Emitter Base Voltage (VEBO)
8V
Gain Bandwidth Product
50MHz
Height
2.3mm
hFE Min
1000
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
100V
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
10W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
50MHz
Voltage
100V
DC Rated Voltage
-100V
Width
5.5mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SB1316TL Datasheet
Download the complete datasheet for Rohm 2SB1316TL to view detailed technical specifications.
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