NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage and 50mA continuous collector current. Operates with a 300MHz transition frequency and 82 minimum hFE. Packaged in a surface-mount SMT3 (SC-59, TO-236-3) with 3 pins. Rated for operation between -55°C and 150°C, with 200mW maximum power dissipation. RoHS compliant and lead-free.
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| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
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