ROHM

2SC5053T100Q

Datasheet

NPN BJT Transistor, 1A I(C), 50V V(BR)CEO, 150MHz f(T), SMD

Rohm

2SC5053T100Q

Name: 2SC5053T100Q Rohm
Brand: Rohm
SKU: 2SC5053T100Q

NPN BJT Transistor, 1A I(C), 50V V(BR)CEO, 150MHz f(T), SMD

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current (IC). Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 150MHz. Packaged in a TO-243AA surface mount case with copper and tin plating, suitable for tape and reel packaging. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.

PackageTO-243AA

Current Rating1A

MountingSurface Mount

PolarityNPN

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Technical Specifications

Rohm 2SC5053T100Q technical specifications.

General

Package/Case	TO-243AA
Collector Base Voltage (VCBO)	60V
Collector Emitter Breakdown Voltage	50V
Collector Emitter Voltage (VCEO)	50V
Collector-emitter Voltage-Max	400mV
Contact Plating	Copper, Tin
Continuous Collector Current	1A
Current Rating	1A
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	150MHz
hFE Min	120
Lead Free	Lead Free
Max Breakdown Voltage	50V
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Package Quantity	1000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	500mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	150MHz
DC Rated Voltage	50V