NPN silicon bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 1A continuous collector current. Operates with a maximum power dissipation of 1W and a transition frequency of 100MHz. Includes 120V collector-base voltage and 5V emitter-base voltage ratings. Packaged in a TO-252-3 (SC-63) surface mount package with copper, tin plating. RoHS compliant.
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Rohm 2SD1733TLR technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
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