NPN Silicon Bipolar Junction Transistor, surface mountable in an SOT-89 package. Features a maximum collector current of 700mA and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 120MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
PackageSOT-89
Current Rating700mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm 2SD1767T100R technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
700mA
Current Rating
700mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
120MHz
hFE Min
120
Lead Free
Lead Free
Max Breakdown Voltage
80V
Max Collector Current
700mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
120MHz
DC Rated Voltage
80V
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1767T100R Datasheet
Download the complete datasheet for Rohm 2SD1767T100R to view detailed technical specifications.
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