NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 32V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 800mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 150MHz. Packaged in a 3-pin SC-59 (TO-236-3) SMT3 package, supplied on tape and reel. RoHS compliant with a maximum power dissipation of 200mW and an operating temperature up to 150°C.
PackageTO-236-3
Current Rating800mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm 2SD1781KT146Q technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
100mV
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
400mV
Contact Plating
Copper, Tin, Silver
Continuous Collector Current
800mA
Current Rating
800mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
150MHz
hFE Min
120
Lead Free
Lead Free
Max Breakdown Voltage
32V
Max Collector Current
800mA
Max Operating Temperature
150°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
32V
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1781KT146Q Datasheet
Download the complete datasheet for Rohm 2SD1781KT146Q to view detailed technical specifications.
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