NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector-Emitter Breakdown Voltage (VCEO) and 500mA Continuous Collector Current (IC). Operates with a minimum DC current gain (hFE) of 120 and a transition frequency of 120MHz. Packaged in an SC-59 surface-mount (SMD/SMT) 3-pin configuration, this RoHS compliant component offers a maximum power dissipation of 200mW and operates across a temperature range of -55°C to 150°C.
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Rohm 2SD1782KT146Q technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 120MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
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