The 2SD1858TV2R is a NPN bipolar junction transistor from Rohm with a collector-emitter breakdown voltage of 32V and a maximum collector current of 1A. It has a gain bandwidth product of 150MHz and a maximum operating temperature of 150°C. This transistor is packaged in a through hole configuration and is compliant with RoHS regulations.
Sign in to ask questions about the Rohm 2SD1858TV2R datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm 2SD1858TV2R technical specifications.
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 32V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SD1858TV2R to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
