NPN silicon bipolar junction transistor featuring 80V collector-emitter breakdown voltage and 1A continuous collector current. This surface mount component offers a maximum power dissipation of 2W and a transition frequency of 100MHz. It operates within a temperature range of -55°C to 150°C and is housed in an MPT3 (SC-62) package.
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Rohm 2SD1898T100Q technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
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