NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 1.5A. Operates with a minimum DC current gain (hFE) of 120 and a transition frequency of 80MHz. Packaged in a TO-252-3 (SC-63) surface-mount case with copper, tin plated contacts. Rated for 1W maximum power dissipation and a wide operating temperature range from -55°C to +150°C.
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Rohm 2SD1918TLQ technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 2V |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 1.5A |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 160V |
| RoHS | Compliant |
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