ROHM

2SD1918TLQ

Datasheet

NPN BJT Transistor, 160V, 1.5A, 80MHz, TO-252-3

Rohm

2SD1918TLQ

Name: 2SD1918TLQ Rohm
Brand: Rohm
SKU: 2SD1918TLQ

NPN BJT Transistor, 160V, 1.5A, 80MHz, TO-252-3

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 1.5A. Operates with a minimum DC current gain (hFE) of 120 and a transition frequency of 80MHz. Packaged in a TO-252-3 (SC-63) surface-mount case with copper, tin plated contacts. Rated for 1W maximum power dissipation and a wide operating temperature range from -55°C to +150°C.

PackageTO-252-3

Current Rating1.5A

MountingSurface Mount

PolarityNPN

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Technical Specifications

Rohm 2SD1918TLQ technical specifications.

General

Package/Case	TO-252-3
Collector Base Voltage (VCBO)	160V
Collector Emitter Breakdown Voltage	160V
Collector Emitter Voltage (VCEO)	160V
Collector-emitter Voltage-Max	2V
Contact Plating	Copper, Tin
Continuous Collector Current	1.5A
Current Rating	1.5A
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	80MHz
hFE Min	120
Lead Free	Lead Free
Max Breakdown Voltage	160V
Max Collector Current	1.5A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	1W
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	80MHz
DC Rated Voltage	160V