NPN silicon bipolar junction transistor for surface mount applications. Features a 50V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 250MHz. Packaged in a compact SC-70, 3-pin surface mount case with lead-free contact plating. Operates across a wide temperature range from -55°C to 150°C.
Frequency100MHz
PackageSC
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Rohm 2SD1949T106R technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
400mV
Contact Plating
Copper, Tin, Silver
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
250MHz
Height
0.9mm
hFE Min
120
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
50V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
50V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD1949T106R Datasheet
Download the complete datasheet for Rohm 2SD1949T106R to view detailed technical specifications.
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