NPN silicon bipolar junction transistor for surface mount applications. Features a maximum continuous collector current of 2A and a collector-emitter breakdown voltage of 90V. Offers a minimum DC current gain (hFE) of 1000 and a transition frequency of 80MHz. Housed in an MPT3 (SC-62) package with 3 pins and copper/tin contact plating. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.
PackageTO-243AA
Current Rating2A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm 2SD2170T100 technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 110V |
| Collector Emitter Breakdown Voltage | 90V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 90V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 90V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SD2170T100 Datasheet
Download the complete datasheet for Rohm 2SD2170T100 to view detailed technical specifications.
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