NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter voltage (VCEO) of 50V. Offers a minimum DC current gain (hFE) of 1000 and a transition frequency of 80MHz. Packaged in a SOT-89 surface-mount case with copper, tin contact plating. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Rohm 2SD2212T100 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm 2SD2212T100 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Copper, Tin |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SD2212T100 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
