NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 2A and a collector-emitter voltage (VCEO) of 50V. Offers a minimum DC current gain (hFE) of 1000 and a transition frequency of 80MHz. Packaged in a SOT-89 surface-mount case with copper, tin contact plating. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
PackageSOT-89
Current Rating2A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm 2SD2212T100 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Copper, Tin |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SD2212T100 Datasheet
Download the complete datasheet for Rohm 2SD2212T100 to view detailed technical specifications.
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