NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage and a 3A continuous collector current. Offers a minimum DC current gain (hFE) of 560 and a transition frequency of 50MHz. Packaged in a TO-252-3 (SC-63) case with 3 pins, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1W.
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Rohm 2SD2318TLV technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 560 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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