NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 150mA. Offers a high DC current gain (hFE) of 820 and a transition frequency of 250MHz. Packaged in a compact SOT-323 (SC-70) surface-mount case with 3 pins. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageSOT-323
Current Rating150mA
MountingSurface Mount
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Technical Specifications
Rohm 2SD2351T106W technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Contact Plating
Copper, Tin, Silver
Continuous Collector Current
150mA
Current Rating
150mA
Emitter Base Voltage (VEBO)
12V
Gain Bandwidth Product
250MHz
Height
0.9mm
hFE Min
820
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
50V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Rohm 2SD2351T106W Datasheet
Download the complete datasheet for Rohm 2SD2351T106W to view detailed technical specifications.
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