
NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a 150mA continuous collector current (IC). Operates with a 250MHz transition frequency and offers a minimum hFE of 820. Packaged in an EMT3 (SC-75A) surface-mount package with copper, tin, and silver plating. RoHS compliant and lead-free, with an operating temperature range of -55°C to 150°C.
Rohm 2SD2654TLV technical specifications.
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 820 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SD2654TLV to view detailed technical specifications.
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