The 2SD2662T100 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 1.5A. It features a power dissipation of 2W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-89 case and is lead-free and RoHS compliant.
Sign in to ask questions about the Rohm 2SD2662T100 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm 2SD2662T100 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Contact Plating | Copper, Tin |
| Emitter Base Voltage (VEBO) | 6V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 330MHz |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SD2662T100 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
