NPN Silicon Bipolar Junction Transistor for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and 100mA Max Collector Current (IC). Operates with a 600mV Collector-Emitter Saturation Voltage and offers a minimum DC current gain (hFE) of 420. This surface mount device, packaged in TO-236-3, boasts a 200MHz transition frequency and is RoHS compliant.
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Rohm BC847CT116 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
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