PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -100mA. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 250MHz. Maximum power dissipation is 200mW, with an operating temperature range of -55°C to 150°C. Supplied in tape and reel packaging.
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| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
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