PNP bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. Packaged in a compact SMT3 (SC-59) 3-pin surface-mount package, measuring 2.9mm x 1.6mm x 1.1mm. Offers a minimum DC current gain (hFE) of 39 and a transition frequency of 200MHz. RoHS compliant.
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Rohm DTB123EKT146 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -500mA |
| Height | 1.1mm |
| hFE Min | 39 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Width | 1.6mm |
| RoHS | Compliant |
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