NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Packaged in a SOT-416 surface-mount case and supplied on tape and reel. RoHS compliant.
PackageSOT-416
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm DTC143EETL technical specifications.
General
Package/Case
SOT-416
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
100mA
hFE Min
30
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
150mW
Mount
Surface Mount
Operating Supply Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
250MHz
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Rohm DTC143EETL Datasheet
Download the complete datasheet for Rohm DTC143EETL to view detailed technical specifications.
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