NPN Silicon Bipolar Junction Transistor for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a 100mA Continuous Collector Current. This surface mount device offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 200mW. Packaged in Tape and Reel, this RoHS compliant component is suitable for SMT assembly.
PackageSMD/SMT
Current Rating100mA
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Rohm DTC143TKAT146 technical specifications.
General
Package/Case
SMD/SMT
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
150mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
100mA
Max Power Dissipation
200mW
Mount
Surface Mount
Operating Supply Voltage
50V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
250MHz
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Rohm DTC143TKAT146 Datasheet
Download the complete datasheet for Rohm DTC143TKAT146 to view detailed technical specifications.
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