NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a 150mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 180MHz. Packaged in an EMT6 surface-mount configuration with 6 pins, this lead-free and RoHS compliant component operates from -55°C to 150°C.
Current Rating150mA
MountingSurface Mount
PolarityNPN, PNP
Power150mW
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Technical Specifications
Rohm EMX2T2R technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm EMX2T2R Datasheet
Download the complete datasheet for Rohm EMX2T2R to view detailed technical specifications.
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