The ES6U1T2R is a dual dual drain enhancement mode P-channel MOSFET from Rohm with a maximum drain source voltage of 12V and a maximum continuous drain current of 1.3A. It features a maximum power dissipation of 700mW and is packaged in a WEMT package. The device operates over a temperature range of -55°C to 150°C and is suitable for surface mount applications.
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Rohm ES6U1T2R technical specifications.
| Package/Case | WEMT |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.7(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 0.6(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 12V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 1.3A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 290@6VpF |
| Maximum Power Dissipation | 700mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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