NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of 100mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Packaged in SC-74, 6-pin configuration on tape and reel, with a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
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Rohm IMH4AT110 technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
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