PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 50mA. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 140MHz. Packaged in a 6-pin SC-74 surface-mount (SMD/SMT) package, suitable for tape and reel mounting. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. RoHS compliant and lead-free.
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Rohm IMT4T108 technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 140MHz |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | -120V |
| RoHS | Compliant |
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