The IMX2T108 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It has a maximum power dissipation of 300mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a small outline R-PDSO-G6 package and is lead free and RoHS compliant.
PackageSMD/SMT
Current Rating150mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm IMX2T108 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm IMX2T108 Datasheet
Download the complete datasheet for Rohm IMX2T108 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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