NPN RF small signal bipolar transistor featuring a 1.5GHz gain bandwidth product and transition frequency. This surface mount device offers a continuous collector current of 50mA and a collector emitter breakdown voltage of 20V. With a minimum hFE of 56 and a maximum power dissipation of 300mW, it operates across a temperature range of -55°C to 150°C. Packaged in SMT6, SC-74, 6-pin configuration, this RoHS compliant component is supplied on tape and reel.
PackageSMD/SMT
Current Rating50mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm IMX4T108 technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
50mA
Current Rating
50mA
Emitter Base Voltage (VEBO)
3V
Gain Bandwidth Product
1.5GHz
hFE Min
56
Lead Free
Lead Free
Max Breakdown Voltage
20V
Max Collector Current
50mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
1.5GHz
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
Rohm IMX4T108 Datasheet
Download the complete datasheet for Rohm IMX4T108 to view detailed technical specifications.
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