
NPN RF small signal bipolar transistor featuring a 1.5GHz gain bandwidth product and transition frequency. This surface mount device offers a continuous collector current of 50mA and a collector emitter breakdown voltage of 20V. With a minimum hFE of 56 and a maximum power dissipation of 300mW, it operates across a temperature range of -55°C to 150°C. Packaged in SMT6, SC-74, 6-pin configuration, this RoHS compliant component is supplied on tape and reel.
Rohm IMX4T108 technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 1.5GHz |
| hFE Min | 56 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 1.5GHz |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for Rohm IMX4T108 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
