The IMX5T108 is a small outline NPN RF transistor with a collector-emitter breakdown voltage of 11V and a maximum collector current of 50mA. It has a gain bandwidth product of 3.2GHz and a maximum power dissipation of 300mW. The transistor is packaged in a 6-pin SC package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageSC
Current Rating50mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm IMX5T108 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 11V |
| Collector Emitter Voltage (VCEO) | 11V |
| Collector-emitter Voltage-Max | 11V |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 3.2GHz |
| hFE Min | 56 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3.2GHz |
| DC Rated Voltage | 11V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm IMX5T108 Datasheet
Download the complete datasheet for Rohm IMX5T108 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.