NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 20V collector-emitter breakdown voltage (VCEO) and a 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 560 and a transition frequency of 350MHz. Packaged in a 6-pin SMT6 (SC-74) surface-mount package, suitable for tape and reel deployment. Operates within a temperature range of -55°C to 150°C.
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Rohm IMX9T110 technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 12V |
| Gain Bandwidth Product | 350MHz |
| hFE Min | 560 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 350MHz |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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