NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 20V collector-emitter breakdown voltage (VCEO) and a 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 560 and a transition frequency of 350MHz. Packaged in a 6-pin SMT6 (SC-74) surface-mount package, suitable for tape and reel deployment. Operates within a temperature range of -55°C to 150°C.
PackageSMD/SMT
Current Rating500mA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Rohm IMX9T110 technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
25V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
180mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
12V
Gain Bandwidth Product
350MHz
hFE Min
560
Lead Free
Lead Free
Max Breakdown Voltage
20V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
350MHz
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
Rohm IMX9T110 Datasheet
Download the complete datasheet for Rohm IMX9T110 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
