Surface mount bipolar junction transistor featuring NPN and PNP polarity, designed for small signal applications. This silicon transistor offers a maximum collector current of 500mA and a collector-emitter breakdown voltage of 32V. Key specifications include a minimum hFE of 120 and a transition frequency of 200MHz. The component is RoHS compliant and operates within a temperature range of -55°C to 150°C, packaged in SMT6 (SC-74) with 6 pins.
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Rohm IMZ4T108 technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 32V |
| RoHS | Compliant |
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