P-channel JFET for small signal applications. Features a 1.5A continuous drain current and a 20V drain-to-source breakdown voltage. Offers a low 200mΩ drain-to-source resistance (Rds On Max) and a 10ns turn-on delay time. Packaged in a TSMT5 (SOT-23-5) surface-mount case, this silicon FET operates from -55°C to 150°C with a maximum power dissipation of 900mW. RoHS compliant.
Sign in to ask questions about the Rohm QS5U27TR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm QS5U27TR technical specifications.
| Package/Case | SOT-23-5 |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | -1.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | -20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 325pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
Download the complete datasheet for Rohm QS5U27TR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
