P-channel JFET for small signal applications. Features a 1.5A continuous drain current and a 20V drain-to-source breakdown voltage. Offers a low 200mΩ drain-to-source resistance (Rds On Max) and a 10ns turn-on delay time. Packaged in a TSMT5 (SOT-23-5) surface-mount case, this silicon FET operates from -55°C to 150°C with a maximum power dissipation of 900mW. RoHS compliant.
PackageSOT-23-5
Current Rating-1.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Rohm QS5U27TR technical specifications.
General
Package/Case
SOT-23-5
Continuous Drain Current (ID)
1.5A
Current Rating
-1.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
-20V
Fall Time
10ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
325pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
-2V
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
35ns
Turn-On Delay Time
10ns
DC Rated Voltage
-20V
Compliance
RoHS
Compliant
Datasheet
Rohm QS5U27TR Datasheet
Download the complete datasheet for Rohm QS5U27TR to view detailed technical specifications.
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