P-channel enhancement mode power MOSFET, dual configuration, surface mountable in a 6-pin TSMT lead-frame SMT package. Features a maximum drain-source voltage of 12V and a continuous drain current of 2A. Offers a low maximum drain-source on-resistance of 105 mOhm at 4.5V gate-source voltage. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1250 mW.
Rohm QS6J11TR technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package/Case | TSMT |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.8(Max) |
| Package Height (mm) | 0.95(Max) |
| Seated Plane Height (mm) | 1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 12V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 2A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 770@6VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
