N-Channel Silicon JFET, TSMT6 package, featuring 1A continuous drain current and 30V drain-to-source breakdown voltage. Offers a maximum drain-source on-resistance of 238mΩ at 1.5V gate-source voltage. This surface mount device operates from -55°C to 150°C with a maximum power dissipation of 1.25W. Includes 7ns turn-on and fall times, with 15ns turn-off delay.
PackageSOT-23-6
Current Rating1A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Rohm QS6K1TR technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
1A
Current Rating
1A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
260mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
364MR
Dual Supply Voltage
30V
Fall Time
7ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
77pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
1.5V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
238mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
15ns
Turn-On Delay Time
7ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Rohm QS6K1TR Datasheet
Download the complete datasheet for Rohm QS6K1TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.