N-Channel Silicon JFET, TSMT6 package, featuring 1A continuous drain current and 30V drain-to-source breakdown voltage. Offers a maximum drain-source on-resistance of 238mΩ at 1.5V gate-source voltage. This surface mount device operates from -55°C to 150°C with a maximum power dissipation of 1.25W. Includes 7ns turn-on and fall times, with 15ns turn-off delay.
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Rohm QS6K1TR technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 364MR |
| Dual Supply Voltage | 30V |
| Fall Time | 7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 77pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 238mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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