
P-channel JFET, surface mount, TSMT6 package. Features 1.5A continuous drain current (ID) and 20V drain-to-source breakdown voltage (Vdss). Offers 215mΩ drain-to-source resistance (Rds On Max) and 12V gate-to-source voltage (Vgs). Operates from -55°C to 150°C with 1.25W power dissipation. Includes 270pF input capacitance and fast switching times with 10ns turn-on and 45ns turn-off delays.
Rohm QS6U22TR technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | -1.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 215mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 215mR |
| RoHS Compliant | Yes |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
Download the complete datasheet for Rohm QS6U22TR to view detailed technical specifications.
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