The QS8J11TCR is a surface mount MOSFET with a maximum drain current of 3.5A and a maximum drain to source voltage of 12V. It has a maximum power dissipation of 550mW and an on-resistance of 43mR. The device is packaged in a small outline R-PDSO-F8 package and is lead free and RoHS compliant. It is suitable for use in a variety of applications including power management and switching circuits.
Rohm QS8J11TCR technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 550mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 43mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Rohm QS8J11TCR to view detailed technical specifications.
No datasheet is available for this part.