This P-channel MOSFET has a continuous drain current of 4.5A and a drain to source breakdown voltage of -12V. The device features a drain to source resistance of 29mR and a maximum operating temperature range of -55°C to 150°C. It is packaged in a surface mount package and is lead free and RoHS compliant.
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Rohm QS8J1TR technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 215ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 390ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
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