Power Field-Effect Transistor, 6A I(D), 30V, 0.039ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN
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Rohm QS8M13TCR technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 390pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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