NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 1.5A continuous collector current and 30V collector-emitter breakdown voltage. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 300MHz. Packaged in a SOT-23-6 surface-mount case, this silicon transistor operates from -55°C to 150°C and supports 1.25W maximum power dissipation.
PackageSOT-23-6
Current Rating1.5A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm QSX6TR technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 140mV |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | 1.5A |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm QSX6TR Datasheet
Download the complete datasheet for Rohm QSX6TR to view detailed technical specifications.
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