NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 1.5A continuous collector current and 30V collector-emitter breakdown voltage. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 300MHz. Packaged in a SOT-23-6 surface-mount case, this silicon transistor operates from -55°C to 150°C and supports 1.25W maximum power dissipation.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Rohm QSX6TR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm QSX6TR technical specifications.
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 140mV |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | 1.5A |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Rohm QSX6TR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
