Power Field-Effect Transistor, 7A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN2020-8S, 8 PIN
Rohm RF4E070BNTR1 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
