
N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 9A continuous drain current. This 8-pin HSMT package offers a compact surface-mount solution with a 0.65mm pin pitch and dimensions of 3.3mm x 3.1mm x 0.85mm. Key specifications include a maximum drain-source on-resistance of 12.5 mOhm at 10V and a typical gate charge of 10.1 nC at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 2000mW.
Rohm RMH090N04TB technical specifications.
| Package Family Name | HSMT |
| Package/Case | HSMT |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3(Max) |
| Package Width (mm) | 3.1(Max) |
| Package Height (mm) | 0.85(Max) |
| Seated Plane Height (mm) | 0.9(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 9A |
| Maximum Drain Source Resistance | 12.5@10VmOhm |
| Typical Gate Charge @ Vgs | 10.1@10VnC |
| Typical Gate Charge @ 10V | 10.1nC |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Rohm RMH090N04TB to view detailed technical specifications.
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