N-channel enhancement mode power MOSFET, surface mountable in an LPTS package with gull-wing leads. Features a 40V drain-source voltage, 100A continuous drain current, and low 1.5mΩ drain-source resistance at 10V. Single element configuration with a maximum power dissipation of 40000mW, operating from -55°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package/Case | LPTS |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.1 |
| Package Width (mm) | 9 |
| Package Height (mm) | 4.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 100A |
| Maximum Drain Source Resistance | 1.5@10VmOhm |
| Typical Gate Charge @ Vgs | 130@10VnC |
| Typical Gate Charge @ 10V | 130nC |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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