This N-channel middle power MOSFET is intended for switching power supply applications. It supports a 30 V drain-source voltage and 16 A drain current, with typical on-resistance of 5 mΩ at 4.5 V gate drive and 3.5 mΩ at 10 V. Typical total gate charge is 25 nC and rated power dissipation is 2 W. The device is supplied in the HSMT8 surface-mount package with built-in gate-source protection diode support. Storage temperature range is -55 °C to 150 °C, and the device is RoHS compliant with Pb-free lead plating.
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Rohm RQ3E160AD technical specifications.
| Polarity | Nch |
| Drain-Source Voltage | 30V |
| Drain Current | 16A |
| On-Resistance RDS(on) Typ @ VGS=4.5V | 0.005Ω |
| On-Resistance RDS(on) Typ @ VGS=10V | 0.0035Ω |
| On-Resistance RDS(on) Typ @ Drive | 0.005Ω |
| Total Gate Charge Qg Typ | 25nC |
| Power Dissipation | 2W |
| Drive Voltage | 4.5V |
| Mounting Style | Surface mount |
| Storage Temperature Min | -55°C |
| Storage Temperature Max | 150°C |
| Package Size | 3.3x3.3 (t=0.9)mm |
| Gate-Source Protection Diode | Built-in |
| RoHS | Yes |
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