This N-channel middle-power MOSFET is rated for 30 V drain-source voltage and ±16 A continuous drain current. It provides low on-resistance of 4.5 mΩ maximum at VGS = 10 V and 7.0 mΩ maximum at VGS = 4.5 V, with 2 W power dissipation. The device integrates a gate-source protection diode and is housed in the compact HSMT8 surface-mount package for switching applications. Operating junction and storage temperature range is -55 to +150 °C, and the TB1 orderable version is supplied in 3,000-piece embossed tape-and-reel packaging.
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| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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