P-channel JFET for small signal applications, featuring a continuous drain current of -1A and a drain-to-source breakdown voltage of -30V. This silicon FET offers a maximum power dissipation of 800mW and operates within a temperature range of -55°C to 150°C. Key specifications include a drain-source on-resistance of 350mΩ, input capacitance of 120pF, and fast switching times with a fall time of 11ns. Packaged in a surface-mount TUMT3, this RoHS compliant component is supplied on tape and reel.
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Rohm RSF010P03TL technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | -1A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 630MR |
| Dual Supply Voltage | -30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Nominal Vgs | -2.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -2.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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