RSF010P03TL

P-channel JFET for small signal applications, featuring a continuous drain current of -1A and a drain-to-source breakdown voltage of -30V. This silicon FET offers a maximum power dissipation of 800mW and operates within a temperature range of -55°C to 150°C. Key specifications include a drain-source on-resistance of 350mΩ, input capacitance of 120pF, and fast switching times with a fall time of 11ns. Packaged in a surface-mount TUMT3, this RoHS compliant component is supplied on tape and reel.