RSF014N03TL

N-channel silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting. Features a continuous drain current of 1.4A, a drain-to-source breakdown voltage of 30V, and a maximum power dissipation of 800mW. Offers a low drain-to-source resistance (Rds On Max) of 240mR and a gate-to-source voltage (Vgs) rating of 20V. Packaged in a compact TUMT3 (3-pin) SMD/SMT package, measuring 2mm in length, 1.7mm in width, and 0.77mm in height. Includes fast switching characteristics with turn-on delay and fall times of 6ns, and a turn-off delay time of 13ns.