N-channel silicon power MOSFET supports 100 V drain-source voltage and 65 A continuous drain current. The device provides 4 V gate drive operation with typical on-resistance of 6.5 mΩ at 10 V gate drive and 7 mΩ at 4 V gate drive. It is supplied in an LPTS TO-263S surface-mount package with taping packaging and 1000 pieces per unit quantity. Maximum power dissipation is 100 W, channel temperature is rated to 150 °C, and storage temperature spans -55 °C to 150 °C. The product is not recommended for new designs and is RoHS compliant.
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| Structure | Silicon N-channel MOSFET |
| Package Code | TO-263 (D2PAK) |
| JEITA Package | SC-83 |
| Number of Terminals | 3 |
| Polarity | Nch |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | ±65A |
| Pulsed Drain Current | ±130A |
| Continuous Source Current | 65A |
| Power Dissipation | 100W |
| Channel Temperature | 150°C |
| Storage Temperature Range | -55 to 150°C |
| Thermal Resistance, Channel to Case | 1.25°C/W |
| RDS(on), VGS=10V Typical | 0.0065Ω |
| RDS(on), VGS=4V Typical | 0.007Ω |
| Gate Threshold Voltage | 1 to 2.5V |
| Total Gate Charge | 260nC |
| Input Capacitance | 10780pF |
| Output Capacitance | 785pF |
| Reverse Transfer Capacitance | 560pF |
| Package Size | 13.1 x 10.1 (t=4.7)mm |
| Mounting Style | Surface mount |
| RoHS | Yes |
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