N-channel silicon MOSFET for small signal applications. Features 60V drain-source voltage (Vdss) and 2A continuous drain current (ID). Offers 120mΩ drain-to-source resistance (Rds On) and 1W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a compact TO-236-3 (TSMT3) surface-mount format, ideal for tape and reel assembly.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm RSR020N06TL technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6ns |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Rohm RSR020N06TL Datasheet
Download the complete datasheet for Rohm RSR020N06TL to view detailed technical specifications.
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